Istituto per lo Studio dei Materiali Nanostrutturati     
Zhan Y. Q., Liu X. J., Carlegrim E., Li F. H., Bergenti I., Graziosi P., Dediu V., Fahlman M. The role of aluminum oxide buffer layer in organic spin-valves performance. In: Applied Physics Letters, vol. 94 (5) article n. 053301. American Institute of Physics, 2009.
The electronic structures of the 8-hydroxyquinoline-aluminum (Alq3)/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq3 molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq3 layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [Dediu et al., Phys. Rev. B 78, 115203 (2008)].
DOI: 10.1063/1.3078274
Subject Alumina
Buffer layers
Charge injection
Electronic structure
Ferromagnetic materials
Magnetic circular dichroism
MIS structures
Organic semiconductors
Spin valves
X-ray photoelectron spectra

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional