Istituto per la Microelettronica e Microsistemi     
Moscatelli F., Poggi A., Solmi S., Nipoti R. Nitrogen implantation to in prove electron channel mobility in 4H-SiC MOSFET. In: Ieee Transactions on Electron Devices, vol. 55 pp. 961 - 967. Ieee-Institute of Electrical Electronics Engineers Inc, 2008.
Normally off 4H-SiC MOSFET devices have been fabricated on a p-type semiconductor and electrically characterized at different temperatures. A gate oxide obtained by nitrogen ion implantation performed before the thermal oxidation of Sic has been implemented-in n-channel MOSFET technology. Two samples with a nitrogen concentration at the SiO2/SiC interface of 5 X 10(18) and 1.5 X 10(19) cm(-1) and one unimplanted sample have been manufactured. The sample with the highest N concentration at the interface presents the highest channel mobility and the lowest threshold voltage. For increasing temperature, in all the samples, the threshold voltage decreases, and the electron channel mobility increases. The latter case attains a maximum value of about 40 cm(2)/V center dot s at 200 degrees C for the sample with the highest N concentration. These trends are explained by the reduction of interface electron traps in the upper half of the band gap toward the conduction band edge. These results demonstrate that N implantation can be effectively used to improve the electrical performances of an n-type surface channel 4H-SiC MOSFET.
DOI: 10.1109/TED.2008.917107
Subject Electron mobility
Nitrogen implantation

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