Istituto per la Microelettronica e Microsistemi     
Milita S., De Santis M., Jones D., Parisini A., Palermo V. Real time investigation of the growth of silicon carbide nanocrystals on Si(100) using synchrotron X-ray diffraction. In: Applied Surface Science, vol. 254 pp. 2162 - 2167. Elsevier Science Bv, 2008.
The growth of silicon carbide nanocrystals on Si(1 0 0) is studied by synchrotron surface X-ray diffraction (SXRD) during annealing at high temperature. A chemisorbed methanol monolayer is used as carbon source, allowing to have a fixed amount of carbon atoms to feed the growth. At room temperature, minor changes in the 2 x I reconstruction of silicon are observed due to the formation of Si-O-CH3 and Si-H bonds from methanol molecules. When annealed at 500 degrees C, carbon incorporation into the silicon leads only to local modifications of the surface structure. Above 600 degrees C, tri-dimensional silicon carbide nanocrystals growth takes place, together with surface roughening and sharp decrease of domain sizes of the 2 x I reconstruction. The different processes taking place at each temperature are clearly distinguished and identified during the real time SXRD measurements.
DOI: 10.1016/j.apsusc.2007.09.004
Subject X-ray diffraction
Semiconductor surfaces

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