PUMA
Istituto per la Microelettronica e Microsistemi     
Della Corte F. G., Rao S., Nigro M. A., Suriano F., Summonte C. Electro-optically induced absorption in alpha-Si : H/alpha-SiCN waveguiding multistacks. In: Optics Express, vol. 16 pp. 7540 - 7550. Optical Society of America, 2008.
 
 
Abstract
(English)
Electro optical absorption in hydrogenated amorphous silicon (alpha-Si: H) - amorphous silicon carbonitride (alpha-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 mu m through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
Subject Optical modulation
Carrier depletion
Silicon
Optoelectronics
Transistors


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