PUMA
Istituto per la Microelettronica e Microsistemi     
Bianconi M., Bergamini F., Bentini G. G., Cerutti A., Chiarini M., De Nicola P., Pennestri G. Modification of the etching properties of x-cut Lithium Niobate by ion implantation. In: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, vol. 266 pp. 1238 - 1241. Elsevier Science Bv, 2008.
 
 
Abstract
(English)
In this work x-cut Lithium Niobate crystals were implanted with 0.5 MeV O ions (nuclear stopping regime), 5 MeV 0 ions (sub-threshold electronic stopping regime) and 12.5 MeV Ti ions (ion track regime) at the fluences required for the formation of a surface fully disordered layer. The damage depth profiles were determined by RBS-channeling. Wet etching was performed at room temperature in 50% HF:H2O solution. The data indicated an exponential dependence of the etching rate on the damage concentration. Independently of the damage regime, once random level in the RBS-channeling spectra was attained we measured the same etching rate (50-100 nm/s) and the same volume expansion (similar to 10%) in all samples. These results indicate that the fully disordered layers obtained by electronic damage accumulation have the same chemical properties of those obtained by conventional nuclear damage accumulation and therefore they can be defined "amorphous". The impressive etching selectivity of ion implanted regions makes this process suitable for sub-micro machining of Lithium Niobate
DOI: 10.1016/j.nimb.2007.12.051
Subject Lithium Niobate
Ion implantation
Etching
RBS-channeling


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