PUMA
Istituto per la Microelettronica e Microsistemi     
Armigliato A., Frabboni S., Gazzadi G. Electron diffraction with ten nanometer beam size for strain analysis of nanodevices. In: Applied Physics Letters, vol. 93 (16) article n. 161906. American Institute of Physics, 2008.
 
 
Abstract
(English)
A method to perform nanobeam diffraction (NBD) in a transmission electron microscope with high spatial resolution and low convergence angle is proposed. It is based on the use of a properly fabricated condenser aperture of 1 Ám in diameter, which allows an electron beam about 10 nm in size to be focused on the sample, with a convergence angle in the 0.1 mrad range. Examples of NBD patterns taken in an untilted <110> cross section of a silicon device are shown. Their quality is adequate for spot position determination and hence to obtain, in principle, quantitative strain information.
URL: http://link.aip.org/link/?APPLAB/93/161906/1
DOI: 10.1063/1.3003581
Subject micromechanical devices
silicon
strain sensors
transmission electron microscopy
85.35.-p Nanoelectronic devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices


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