PUMA
Istituto per la Microelettronica e Microsistemi     
Moscatelli F., Scorzoni A., Poggi A., Nipoti R. Annealing effects on leakage current and epilayer doping concentration of p+n junction 4H-SiC diodes after very high neutron irradiation. In: Nuclear Instruments & Methods In Physics Research Section A-accelerators Spectrometers Detectors And Associated Equipment, vol. 583 (1) pp. 173 - 176. Elsevier B.V, 2007.
 
 
Abstract
(English)
In this work we analyzed the annealing effects on SiC p+n diodes after very high 1 MeV neutron fluence. The diode structure is based on ion implanted p+ emitter in n-type epilayer with thickness equal to 5 m and donor doping ND = 3_1015 cm-3. These devices were irradiated with 1 MeV neutrons at 4 different fluence values, logarithmically distributed in the range 1014-1016 cm-2. After irradiation the epilayer material became more resistive, as indicated by the reduction of the forward and reverse current density at a given voltage. In particular, after irradiation at the highest fluence value the average leakage current density at 100 V reverse bias decreased from 3 nA/cm2 to values of the order of 100 pA/cm2. After a neutron fluence of 1_1014 cm-2 the epilayer doping concentration decreased to 1.51015 cm-3. The samples underwent a sequence of thermal cycles first at 80C and then at 200C to verify if a damage recovery occurs in irradiated SiC samples, as in the case of silicon ones. After annealing at 80C the reverse current further decreased, while the depletion voltage remained almost constant. After thermal cycles at 200C the current decreased further and the depletion voltage slightly increased, showing a very low recovery of the damage.
DOI: 10.1016/j.nima.2007.08.211
Subject Silicon carbide
Detectors
Radiation damage
Annealing effects
29.40.Wk
61.80.Hg
68.60.Dv


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