Istituto dei materiali per l'elettronica ed il magnetismo     
Cabailh G., Lazzari R., Cruguel H., Jupille J., Savio L., Smerieri M., Orzelli A., Vattuone L., Rocca M. Stoichiometry-Dependent Chemical Activity of Supported MgO(100) Films. In: Journal of Physical Chemistry A, vol. 115 (25) pp. 7161 - 7168. American Chemical Society, 2011. [Online First 29 April 2011]
Here, we show that the stoichiometry and, consequently, the chemical activity toward hydroxylation of MgO(100) films grown by reactive deposition on Ag(100) strongly depend on the O2 partial pressure during film growth. Oxygen-deficient films undergo dramatic relative oxygen uptake either by exposure to a partial pressure of water vapor or by aging in vacuum for a sufficiently long time. Conversely, on stoichiometric monolayer MgO islands, photoemission analysis of the O 1s level and scanning tunneling microscopy images are consistent with the prediction that dissociative adsorption of water occurs only at the borders of the islands.
URL: http://pubs.acs.org/doi/abs/10.1021/jp200069u
DOI: 10.1021/jp200069u
Subject MgO
chemical activity hydroxylation

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