Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Rossi F., Bosi M., Watts B. E., Salviati G. The Effect of Substrate Type on SiC Nanowire Orientation. In: Journal of Nanoscience and Nanotechnology, vol. 11 (5) pp. 4109 - 4113. American Scientific Publishers, 2011.
Beta-SiC nanowires were synthesized on different monocrystalline substrates: Si (001), Si (111), 3CSiC (001), 4H-SiC (0001), 6H-SiC (0001). The SiC nanowire growth was carried out using a Chemical Vapor Deposition method, with silane and propane diluted in hydrogen (3%) as precursors. The deposition was performed at atmospheric pressure and at 1100 C, after dewetting of the Ni catalyst, which had been previously evaporated onto the substrate, to induce 1D growth according to a VLS process. The crystal structure of the nanowires, as determined by X-ray diffraction and High Resolution Transmission Electron Microscopy, corresponds to 3C-SiC polytype growing along a <111> direction, irrespective of the substrate. The occurrence of (111) stacking faults was observed, partly reduced for samples grown on 3C-SiC substrate. The growth on (111) substrate allowed to achieve a good vertical alignment of the nanowires, as investigated by Scanning Electron Microscopy. High Angle Annular Dark Field imaging and Energy Dispersive X-Ray spectroscopy were performed to study the catalyst particle on top of the wires and showed the formation of a nickel-silicon alloy.
URL: http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000005/art00051?token=004a1680633bf97b76504c48663b252c494a467a6c34425e6a332b257d7241255e4e6b6331
DOI: 10.1166/jnn.2011.3864
Subject Silicon Carbide nanowires

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional