PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Gomis-Bresco J., Munoz-Matutano G., Martinez-Pastor J., Alen B., Seravalli L., Frigeri P., Trevisi G., Franchi S. Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping. In: New Journal of Physics, vol. 13 article n. 023022. IOP Publishing Ltd and Deutsche Physikalische Gesellschaft, 2011.
 
 
Abstract
(English)
Wemodelthetime-resolvedandtime-integratedphotoluminescence ofasingleInAs/GaAsquantumdot(QD)usingarandompopulationdescription. Wereproducethejoint powerdependenceofthesingleQDexcitoncomplexes (neutral exciton, neutral biexciton and charged trions). We use the model toinvestigatetheselectiveoptical pumpingphenomenon, apredominanceof thenegativetrionobservedwhentheoptical excitationis resonant toanon- intentional impuritylevel. Ourexperimentsandsimulationsdeterminethat the negativechargeconfinedintheQDafterexcitingresonancetotheimpuritylevel escapesin10ns.
DOI: 10.1088/1367-2630/13/2/023022
Subject InAs/GaAs Quantum Dots


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