Istituto dei materiali per l'elettronica ed il magnetismo     
Baldini M., Ghezzi C., Parisini A., Tarricone L., Vantaggio S., Gombia E., Motta A., Gasparotto A. Growth and characterization of buried GaSb p-n junctions for photovoltaic applications. In: Crystal Research and Technology, vol. 46 (8) pp. 852 - 856. Special Issue: Italien Crystal Growth Conference 2010 (ICG2010). WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011.
Structures composed of a p++(Zn)GaAs layer deposited by MOVPE on a n(Te)-doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p-n homo-junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post-growth annealing parameters were investigated. The junctions were characterized from the electrical point of view by I-V measurements, while Zn diffusion profiles were studied by SIMS analysis. The effective achievement of a GaSb buried junction, whose profile is characterized by a limited Zn diffusion into the substrate, was evidenced. Efficiency measurements by a solar simulator on 5x5 mm2 samples were also performed in order to investigate the photovoltaic properties of the structure.
URL: http://www.crt-journal.org
DOI: 10.1002/crat.201000639
Subject GaAs/GaSb
Zn diffusion
solar cells

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