PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Baldini M., Ghezzi C., Parisini A., Tarricone L., Vantaggio S., Gombia E., Motta A., Gasparotto A. Growth and characterization of buried GaSb p-n junctions for photovoltaic applications. In: Crystal Research and Technology, vol. 46 (8) pp. 852 - 856. Special Issue: Italien Crystal Growth Conference 2010 (ICG2010). WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011.
 
 
Abstract
(English)
Structures composed of a p++(Zn)GaAs layer deposited by MOVPE on a n(Te)-doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p-n homo-junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post-growth annealing parameters were investigated. The junctions were characterized from the electrical point of view by I-V measurements, while Zn diffusion profiles were studied by SIMS analysis. The effective achievement of a GaSb buried junction, whose profile is characterized by a limited Zn diffusion into the substrate, was evidenced. Efficiency measurements by a solar simulator on 5x5 mm2 samples were also performed in order to investigate the photovoltaic properties of the structure.
URL: http://www.crt-journal.org
DOI: 10.1002/crat.201000639
Subject GaAs/GaSb
Zn diffusion
solar cells
MOVPE
TPV


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