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Istituto dei materiali per l'elettronica ed il magnetismo     
Bertolazzi S., Wunsche J., Cicoira F., Santato C. Tetracene thin film transistors with polymer gate dielectrics. In: Applied Physics Letters, vol. 99 (1) article n. 013301. American Institute of Physics, 2011.
 
 
Abstract
(English)
The use of polymer dielectrics is an important step towards large-area, flexible, and low-cost electronics. In this letter, we study the effect of the polymer dielectrics polystyrene and parylene C on the charge transport properties of tetracene thin films in transistor configuration. By using polymer dielectrics, the tetracene hole mobility increased by more than one order of magnitude, up to 0.2 cm(2) V(-1) s(-1), as compared to bare silicon dioxide. We correlate this result to a favorable morphology of the tetracene films during the early stages of growth.
DOI: 10.1063/1.3606535
Subject Field-Effect Transistors
Light-Emitting Transistors
Single-Crystal
Mobility


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