Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Marchini L., Zha M., Benassi G., Zambelli N., Calestani D., Zanotti L., Gombia E., Mosca R., Zanichelli M., Pavesi M., Auricchio N., Caroli E. Growth and characterization of CZT crystals by the vertical Bridgman method for X-Ray detector applications. In: IEEE Transactions on Nuclear Science, vol. 58 (5) pp. 2352 - 2356. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2011.
CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals. The resistivity, emission spectra, μτ product, and spectroscopic characteristics of these detectors were extensively measured and compared with the characteristics of detectors obtained from CdZnTe crystals grown by the boron oxide encapsulated vertical Bridgman technique. The detectors prepared from crystals grown without boron oxide show good μτ value, spectroscopic resolution, and higher reproducibility. The influence of growth method on impurity content and on detector response was discussed.
DOI: 10.1109/TNS.2011.2163643
Subject Boron oxide vertical Bridgman
mobility- lifetime product
vertical Bridgman
X-ray detectors

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