Istituto dei materiali per l'elettronica ed il magnetismo     
Camarda G., Andreini K., Bolotnikov A., Cui Y., Hossain A., Gul R., Kim K., Marchini L., Xu L., Yang G., Tkaczyk J., James R. B. Effect of extended defects in planar and pixelated CdZnTe detectors. In: Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, vol. 652 (1) pp. 170 - 173. Elsevier B.V, 2011.
We evaluated a spectroscopy-grade 15 x 15 x 7 mm(3) CdZnTe (CZT) crystal with a high pi-product, > 10(-2) cm(2)/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.
DOI: 10.1016/j.nima.2010.12.012
Subject CdZnTe
X-ray response maps
Extended defects

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