PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Bensalah H., Crocco J., Carcelen V., Plaza J., Zheng Q., Marchini L., Zanichelli M., Dominguez G., Soriano L., Dieguez E. Study of ammonium fluoride passivation time on CdZnTe bulk crystal wafers. In: Crystal Research and Technology, vol. 46 (7) pp. 659 - 663. WILEY-VCH, 2011.
 
 
Abstract
(English)
The chemical etching and the passivation processes of CdZnTe wafers were studied. The treatment effects were tested through an X-Ray Photoelectron Spectroscopy (XPS) analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes making rich the surface with Te. After different etching times, the CdZnTe wafers were passivated with NH4F/H2O2.CdZnTe wafer passivated immediately after etching showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO2, which results in the thickest oxide layer, and the most stoichiometric surface. Also the surface leakage current was reduced in comparison with the sample passivated 24 h after etching.
DOI: 10.1002/crat.201100106
Subject CZT
X-ray radiation detector


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