Istituto dei materiali per l'elettronica ed il magnetismo     
Watts B. E., Attolini G., Rossi F., Bosi M., Salviati G., Mancarella F., Ferri M., Roncaglia A., Poggi A. β-SiC NWs grown on patterned and MEMS silicon substrates. In: Materials Science Forum, vol. 679 - 680 pp. 508 - 511. 8th European Conference on Silicon Carbide and Related Materials Location: Sundvolden Conf Ctr, Oslo, NORWAY Date: AUG 29-SEP 02, 2010. Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson (eds.). Trans Tech Publications, Switzerland, 2011.
Cubic silicon carbide nanowires (β-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers. The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with <111> growth axis and stacking defects on (111) planes.
URL: http://www.scientific.net/MSF.679-680.508
DOI: 10.4028/www.scientific.net/MSF.679-680.508
Subject SiC

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