PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Sorianello V., Colace L., Armani N., Rossi F., Ferrari C., Lazzarini L., Assanto G. Low-temperature germanium thin films on silicon. In: Optical Materials Express, vol. 1 (5) pp. 856 - 865. Optical Society of America, 2011.
 
 
Abstract
(English)
We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-infrared detectors integrated on a Silicon platform. We study the structural properties of samples grown at various substrate temperatures by X-ray diffraction and transmission electron microscopy, showing that Ge thin films are amorphous when deposited below 225C, mono-crystalline between 225 and 400C, poly-crystalline above 450C. We further investigate their optical and electrical properties using differential optical absorption spectroscopy, Hall and photocurrent measurements. Finally, with the evaporated Ge thin films we demonstrate near-infrared photodiodes with low dark current density and good responsivity at 1.55 μm.
URL: http://www.opticsinfobase.org/ome/abstract.cfm?uri=ome-1-5-856
DOI: 10.1364/OME.1.000856
Subject Germanium


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