Istituto dei materiali per l'elettronica ed il magnetismo     
Cimberle M. R., Bellingeri E., Pallecchi I., Buzio R., Gerbi A., Marrč D., Tropeano M., Putti M., Palenzona A., Kaciulis S., Ferdeghini C. Critical Temperature Enhancement by Biaxial Compressive Strain in FeSe0.5Te0.5 Thin Films. In: Journal of Superconductivity, vol. 24 (1-2) pp. 35 - 41. Springer Science, 2011.
High-purity epitaxial FeSe0.5Te 0.5 thin films with different thicknesses were grown by pulsed laser ablation on different substrates. By varying the film thickness, T c values of up to 21 K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to T c. The latter result indicates the important role of the compressive strain in enhancing T c: the compressive strain derives from the Volmer-Weber growth of the films. The critical temperature is also related to both the Fe- (Se,Te) bond length and angle, suggesting the possibility of further enhancement.
DOI: DOI 10.1007/s10948-010-0896-4
Subject Thin films
Epitaxial growth

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