Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Serényi M., Khánh N. Q., Csik A., Riesz F., Erdélyi Z., Nasi L., Beke D. L., Boyen H. Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers. In: Nanoscale Research Letters, vol. 6 article n. 189. Springer Open, 2011.
Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.
URL: http://www.nanoscalereslett.com/content/6/1/189
DOI: 10.1186/1556-276X-6-189
Subject Amorphous Si
Amorphous Ge
IR absorbance

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