Istituto dei materiali per l'elettronica ed il magnetismo     
Bosi M., Attolini G., Calicchio M., Gombia E. A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications. In: EUPV2009 - European Photovoltaic Conference 2001, Hamburg, Germany, 7 Sept 2009 (Hamburg, Germany, 21-25 Settembre 2009). Abstract, article n. 1CV.4.32. WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG (eds.). EU PVSEC, 2010.
Homoepitaxial Ge layers were deposited by means of Metal Organic Vapor Phase Epitaxy (MOVPE) on Ge using Iso-Butyl Germane (iBuGe) as organic precursor. n-type Ge layers with thickness of about 400 nm were deposited on p-type substrates. In order to passivate the Ge surface, structures such as n-InGaP/n-Ge/p-Ge, n-GaAs/n-Ge/p-Ge and n-GaAs/n-InGaP/n-Ge/p-Ge were deposited. In this case the n-InGaP and n-GaAs act as window layers, while the n-Ge/p-Ge is the active junction. Vertical mesa junctions were prepared on these structures by using conventional photolithographic techniques. Ohmic contacts were obtained by evaporation and annealing of Au on the backside of the p-type substrate followed by evaporation of 400 mm in diameter Au dots on the epilayer surface. 500 mm mesa structures, concentric to Au dots, were then prepared by chemical etching of the layer. The current-voltage characteristics of the junctions were analyzed, and the influence of the window layer is discussed
Subject epitaxial germanium

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