Istituto dei materiali per l'elettronica ed il magnetismo     
Ricciardi C., Canavese G., Castagna R., Ferrante I., Marasso S., Ricci A., Watts B. E., Attolini G., Bosi M., Nasi L., Ranzieri P. Mechanical characterization of 3C-SiC grown on Si micromachined cantilever. In: ECSCRM8th-2010 - 8th European Conference on Silicon Carbide and Related Materials - 2010 (Oslo, 29/08 - 02/09 2010).
Resonating microcantilever (MCs) are extremely sensitive mass detectors that have been successfully proposed as chemical, biological and environmental sensors [1]. However, recent works have demonstrated that variation of flexural rigidity due to localization of molecule absorption can induce a positive frequency shift larger than the negative one due to the added mass effect [2]. Goal of our research is to grown and pattern thin 3C-SiC films on Si MC to obtain a huge local increment of beam stiffness, exploiting the outstanding mechanical properties of such material (in particular, its large Young modulus).
Subject SiC

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