Istituto dei materiali per l'elettronica ed il magnetismo     
Camarda G., Bolotnikov A., Cui J., Gul R., Hossain A., Kim K., Marchini L., Xu L., Yang G., James R. Study of the Internal E-Field in Planar and Pixellated CdZnTe Detectors. In: IEEE 2010 NSS MIC RTSD (Knoxville, Tennessee, USA, October 30 - November 6 2010).
The local and global internal E-field in CdZnTe (CZT) can be affected by the surface quality, contact geometry, and dislocations, leading to reduction of efficiency of local charge-collection and, thus, the devices performances. We measured CZT detectors with planar electrode contacts and observed non-uniformities in the X-ray response maps corresponding to fluctuations in the collected charge. To confirm and interpret the presence of the distortion of the internal E-field, we employed a high-intensity X-ray beam collimated down to a 10-micrometer spot size for Micron-scale X-ray Detector Mapping (MXDM) to measure CZT detectors with a pixel-anode electrode. For all the detectors measured, we observed a distorted X-ray response map, confirming the non-uniformity in the charge transport of the CZT detectors. X-ray response maps of the detectors, which reflected the non-uniformity of the charge transport, were correlated with the White X-ray Diffraction Topography (WXDT) images, which disclose the dislocations. The techniques and the role of dislocations on planar- and pixellated-electrode detectors will be presented.
Subject CdZnTe
X-ray detectors

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional