Istituto dei materiali per l'elettronica ed il magnetismo     
Prutskij T., Pelosi C. Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers. In: Crystal Research and Technology, vol. 45 (1) pp. 79 - 84. Wiley, 2010.
The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP2 epitaxial layer was measured at temperatures of 10 - 300 K. Within this temperature range the PL emission is dominated by hand-to-hand radiative recombination. The PL intensity temperature dependence has two regions: at low temperatures it quenches rapidly as the temperature increases, and above 100 K it reduces Slowly. This temperature behavior is compared with that of disordered GaInP2 layer. The specter of the PL emission of the disordered layer has two peaks, which are identified as due to donor-accepter (D-A) and hand-to-hand recombination. The PL intensity quenching of these spectral bands is very different: With increasing temperature, the D-A peak intensity remains almost unchanged at low temperatures and then decreases at a higher rate. The intensity of the hand-to-hand recombination peak decays gradually, having a higher rate at low temperatures than at higher temperatures. Comparing these temperature dependencies of these PL peaks of ordered and disordered alloys and the temperature behavior of their full width at half maximum (FWHM), we conclude that the different morphology of these alloys causes their different temperature behavior.
DOI: 10.1002/crat.200900418
Subject III-V semiconductors

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