Istituto dei materiali per l'elettronica ed il magnetismo     
Fabbri F., Cavallini A. Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H-SiC. In: Journal of Applied Physics, vol. 108 (1) article n. 013702. American Institute of Physics, 2010.
The electrical properties of high-purity 4H-SiC epitaxial layers are investigated. The current density versus applied voltage curves shows that some specimens have space charge limited transport behavior. Lampert-Mark model for trap-controlled electron transport in semi-insulating materials demonstrated the presence of an intragap state at 0.26 eV below the conduction band. Photodeep level transient spectroscopy has confirmed the presence of a deep level at about 0.3 eV below the conduction band only in samples with non-Ohmic behavior. Cathodoluminescence imaging has revealed the presence of high luminescent areas related to stacking faults (SFs) under the devices showing non-Ohmic behavior. The presence of single-layer SFs was detected by cathodoluminescence spectroscopy due to the typical emission at 2.95 eV. Thus, we demonstrated that the SFs modified the charge transport from Ohmic conduction to space charge limited conduction of the affected samples.
DOI: 10.1063/1.3456160
Subject Spectroscopy

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