Istituto dei materiali per l'elettronica ed il magnetismo     
Capellini G., De Seta M., Busby Y., Pea M., Evangelisti F., Nicotra M., Spinella C., Ferrari C. Strain relaxation in high Ge content SiGe layers deposited on Si. In: Journal of Applied Physics, vol. 107 article n. 063504. SPECIAL TOPIC: SELECTED PAPERS FROM THE FOURTH INTERNATIONAL CONFERENCE ON MULTISCALE MATERIALS MODELING, TALLAHASSEE, FLORIDA, USA, 2008. American Institute of Physics, 2010.
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si0.22Ge0.78 heteroepitaxial layer deposited on Si substrates in tensile, neutral, and compressive strain conditions. The three regimes have been obtained by interposing between the SiGe layer and the substrate a fully relaxed Ge layer, a partially relaxed Ge layer, or growing directly the alloy on Si. We found that the deposition of a Ge buffer layer prior to the growth of the SiGe is very promising in view of the realization of thin virtual substrates on silicon to be used for the deposition of strain-controlled high Ge content SiGe alloys. We demonstrate that this is mainly due to the strain relaxation mechanism in the Ge layer occurring via insertion of pure edge 90 misfit dislocations (MDs) and to the confinement of threading arms in to the Ge layer due to a second MD network formed at the SiGe/Ge heterointerface.
DOI: 10.1063/1.3327435
Subject Strain relaxation
SiGe layers

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