Istituto dei materiali per l'elettronica ed il magnetismo     
Meneghini M., Stocco A., Ronchi N., Rossi F., Salviati G., Meneghesso G., Zanoni E. Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors. In: Applied Physics Letters, vol. 97 article n. 063508. American Institute of Physics, 2010.
This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors HEMT submitted to different bias regimes. The results described within this paper indicate that: i under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; ii for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; iii for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.
DOI: 10.1063/1.3479917
Subject HEMT

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