PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Meneghini M., Stocco A., Ronchi N., Rossi F., Salviati G., Meneghesso G., Zanoni E. Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors. In: Applied Physics Letters, vol. 97 article n. 063508. American Institute of Physics, 2010.
 
 
Abstract
(English)
This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors HEMT submitted to different bias regimes. The results described within this paper indicate that: i under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; ii for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; iii for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.
DOI: 10.1063/1.3479917
Subject HEMT


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