Istituto dei materiali per l'elettronica ed il magnetismo     
Heun S., Radha B., Ercolani D., Kulkarni G., Rossi F., Grillo V., Salviati G., Beltram F., Sorba L. Pd-Assisted Growth of InAs Nanowires. In: Crystal Growth & Design, vol. 10 (9) pp. 4197 - 4202. American Chemical Society, 2010.
We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography.
URL: http://pubs.acs.org/crystal
DOI: 10.1021/cg1008335
Subject InAs nanowires

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