Istituto dei materiali per l'elettronica ed il magnetismo     
Seravalli L., Trevisi G., Frigeri P., Bocchi C. Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 Ám window. In: Institute of Physics Conference Series, vol. 245 (1) article n. 012074. IOP Publishing Ltd, 2010.
We report on the molecular beam epitaxy growth of InAs/InGaAs metamorphic quantum dot structures for single-photon operation at long wavelengths. Low density of quantum dots has been achieved by depositing sub-critical coverages of InAs, while the redshift of emission was obtained by growing the nanostructures on relaxed InGaAs buffers. By optimizing the design and growth parameters, such as the InAs coverage, the post growth annealing time and the compositions of InGaAs confining layers, we were able to obtain structures with quantum dot densities of the order of the 108 cm-2 and emission in the whole range 1.3 - 1.55 μm at low temperature.
URL: http://iopscience.iop.org/1742-6596/245/1/012074
DOI: 10.1088/1742-6596/245/1/012074
Subject molecular beam epitaxy
metamorphic quantum dot
single-photon operation
81.16.-c Methods of nanofabrication and processing
78.67.Hc Quantum dots

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