Istituto dei materiali per l'elettronica ed il magnetismo     
Martínez-Pastor J., Muñoz-Matutano G., Alén B., Canet-Ferrer J., Fuster D., Trevisi G., Seravalli L., Frigeri P., Franchi S. Thermal activated carrier transfer between InAs quantum dots in very low density samples. In: Institute of Physics Conference Series, vol. 210 (1) article n. 012015. International Conference on Optics of Excitons in Confined Systems (OECS11). IOP Publishing Ltd, 2010.
In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/μm2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.
URL: http://iopscience.iop.org/1742-6596/210/1/012015
DOI: 10.1088/1742-6596/210/1/012015
Subject 71.35.-y Excitons and related phenomena
66.30.H- Self-diffusion and ionic conduction in nonmetals
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
79.40.+z Thermionic emission

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