PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Martinez O., Hortelano V., Jimenez J., Parra V., Pelosi C., Attolini G., Attolini G., Prutskij T. Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces. In: Journal of Electronic Materials, vol. 39 (6) pp. 671 - 676. TMS, 2010.
 
 
Abstract
(English)
GaInP, an essential material for multijunction structures of III-V compounds for solar cells, can achieve better photovoltaic responses when grown on (111)GaAs faces, due to the large internal electric fields generated by the off-diagonal strain. In this work, we explored metalorganic chemical vapor deposition growth of GaInP layers on (001)-, (111)Ga-, and (111)As-GaAs substrates, using different phosphine flow rates. The structural and optical properties of the layers have been studied by micro-Raman spectroscopy, microphotoluminescence, and cathodoluminescence. Problems such as composition control, growth rate, and the presence of ordered phases are addressed.
Subject Ingap
ordering
raman
luminescence


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