Istituto dei materiali per l'elettronica ed il magnetismo     
Bietti S., Somaschini C., Koguchi N., Frigeri C., Sanguinetti S. Self-Assembled Local Artificial Substrates of GaAs on Si Substrate. In: Nanoscale Research Letters, vol. 5 (12) pp. 1905 - 1907. Special Section(pp.1863-1951): 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces. Springer, 2010.
We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm-2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III-V quantum nanostructures directly on silicon substrate.
DOI: 10.1007/s11671-010-9760-5
Subject Nanotechnology
Droplet Epitaxy
Integration of III-V on Si
Local artificial substrate

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