Istituto dei materiali per l'elettronica ed il magnetismo     
Bellingeri E., Pallecchi I., Buzio R., Gerbi A., Marrč D., Cimberle M., Tropeano M., Putti M., Palenzona A., Ferdeghini C. Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain. In: Applied Physics Letters, vol. 96 article n. 102512. AIP, 2010.
High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.
URL: http://0003-6951/2010/96(10)/102512/3/
DOI: 10.1063/1.3358148
Subject thin film
iron based superconductors

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional