Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Rossi F., Watts B. E., Salviati G., Battistig G., Dobos L., Pecz B. SiC epitaxial growth on Si(100) substrates using carbon tetrabromide. In: Materials Science Forum, vol. 645-648 pp. 139 - 142. Trans Tech Publications, Switzerland, 2010.
3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.
DOI: 10.4028/www.scientific.net/MSF.645-648.139
Subject 3C-SiC
carbon tetrabromide

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