PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Rossi F., Fabbri F., Attolini G., Bosi M., Watts B. E., Salviati G. TEM and SEM-CL studies of SiC Nanowires. In: Materials Science Forum, vol. 645-648 pp. 387 - 390. Trans Tech Publications, Switzerland, 2010.
 
 
Abstract
(English)
Beta-SiC and beta-SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon monoxide, ii) silane with propane and iii) carbon tetrachloride precursors, are analysed by structural and optical techniques. Spectroscopic cathodoluminescence studies show a luminescence enhancement in core-shell structures, ascribed to an effective role of the shell as both carrier injecting barrier and passivation layer. In NWs grown using CCl4 precursor, a peculiar luminescence with dominant red component at about 2 eV has been detected and ascribed to point defects related to an unintentional oxygen incorporation.
DOI: 10.4028/www.scientific.net/MSF.645-648.387
Subject silicon carbide
nanowires
TEM
Cathodoluminescence (CL) technique


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