PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Nasi L., Serenyi M., Csik A., Erdely Z., Beke D. L. Influence of hydrogen on the structural stability of annealed ultrathin Si/Ge amorphous layers. In: GADEST2009 - XIII International Autumn Meeting, Gettering and Defect Engineering in Semiconductor Technology (Döllnsee-Schorfheide Berlin, 26 Sept.-02 Oct. 2009). Abstract, p. 1. IHF - Frankfuhrt Oder, 2009.
 
 
Abstract
(English)
Semiconductor structures based on Si and Ge are generally submitted to hydrogenation because H passivates the dangling bonds of Si and Ge. By this way the devices prepared from those semiconductors, e.g., solar cells, have much better electrical properties. However, H stability is still a critical issue. In fact, there is wide evidence that H is very unstable against illumination as well as heat treatment. It has been seen that H out effuses from the samples under such treatments. As this causes unsaturation of the dangling bonds the electrical properties worsen significantly. In this work we will show that in the case of ultrathin Si/Ge amorphous layers the H thermal instability also affects the structural stability even up to the micrometric scale depending on the H content. Such type of structure can also be used to prepare SiGe alloys by mixing the layers with heat treatments. The samples were amorphous multilayers (MLs) of alternating ultrathin (3 nm) layers of Si and Ge deposited by sputtering on (100) oriented Si substrate. The total thickness of the MLs was 300 nm. The samples were hydrogenated by introducing H in the sputter chamber with flow rates varying from 0.8 to 6 ml/min. The MLs underwent different heat treatments, from the one at 350 °C for 1 h up to the one at 250 °C for 0.5 h + 450 °C for 5 h. The samples were analysed by AFM, TEM, energy filtering TEM and Small-Angle X-Ray Diffraction (SAXRD). AFM showed that upon annealing the structure of the samples degrades with formation of surface bumps whose size increases by increasing the annealing temperature and/or time, for the same H content, or by increasing the H content for the same annealing conditions. For high H content and/or annealing conditions AFM showed that the bumps have blown up giving rise to craters. This suggests that H was released from its dangling bonds to Si and Ge and formed H bubbles in the MLs because of the energy supplied by the annealing. Additional energy for the break of the Si-H and Ge-H bonds could be the one supplied by the recombination of thermally generated carriers associated with the band gap fluctuations caused by the not uniform distribution of H in the MLs. The first sites of H accumulation are very likely nanocavities certainly present in the amorphous MLs. By TEM it has been seen that layer intermixing occurred which could be the first step of H bubbles formation. SAXRD measurements as well as TEM energy filtering maps for Si and Ge showed that Si and Ge interdiffusion took place in an asymmetric way as Si was seen to diffuse to the Ge layers whereas Ge did not diffuse to the Si layers. This might be due to the higher density of free dangling bonds in the Ge layers created by annealing because the binding energy of the Ge-H bond is smaller than the one of the Si-H bond.
Subject Si/Ge
Amorphous multilayers
TEM-EDS
AFM
Structural characterization
61.05.cf
61.72.uf
66.30.-h


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