Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Nasi L., Serenyi M., Csik A., Erdely Z., Beke D. L. Structural Instability of Annealed a-Si/a-Ge Nanostructures. In: Nanomeeting-2009 (Minsk (BY), 26-29 May 2009). Abstract, p. 2. Physics Department- State University of Minsk, 2009.
It is shown that heat treatments cause remarkable structural instability in nanostructures made of alternating 3 nm thick hydrogenated layers of a-Si and a-Ge deposited by sputtering. Upon annealing surface bumps form whose size and density increase with increasing H content. They are due to the presence of H bubbles inside the samples, which even blow up for the highest H content. The H bubbles form by accumulation of H2 molecules made possible by the break of the Si-H and Ge-H bonds driven by the energy supplied by the heat treatment and by the recombination of thermally generated carriers.
Subject Si/Ge
Amorphous multilayers
Structural characterization

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