Istituto dei materiali per l'elettronica ed il magnetismo     
Rossi F., Fabbri F., Attolini G., Bosi M., Watts B. E., Salviati G. TEM and SEM-CL studies of SiC Nanowires. In: ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2009 (Nurnberg (Germany), 11-16 ottobre 2009).
3C-SiC and 3C-SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon monoxide, ii) silane with propane and iii) carbon tetrachloride precursors, are analysed by structural and optical techniques. Spectroscopic cathodoluminescence studies show a luminescence enhancement in core-shell structures, ascribed to an effective role of the shell as both carrier injecting barrier and passivation layer. In NWs grown using CCl4 precursor, a peculiar luminescence with dominant red component at about 2 eV has been detected and ascribed to point defects related to an unintentional oxygen incorporation.
vedi abstract inglese
URL: http://www.lap.physik.uni-erlangen.de/icscrm2009/index.php
Subject Silicon Carbide nanowires

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