Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Rossi F., Bosi M., Watts B. E., Fabbri F., Salviati G. Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires. In: WASMPE 09 - WASMPE 09 (Catania, 07-08/05 2009).
b-SiC and SiO2/b-SiC core-shell nanowires have been prepared on silicon substrate by using carbontetrachloride and carbon monoxide respectively. b-SiC NWs were obtained by making use of a chemical reaction in which carbon tetrachloride (CCl4) acted as a precursor. By this method, the decomposition of CCl4 produce chlorine which, by reacting with silicon, gives rise to silicon chlorides which recombine with carbon to yield silicon carbide. The reaction take place in a quartz open tube under a flow of nitrogen at a temperature range of 1273-1373 K . SiO2/b-SiC core-shell SiC-NWs have been prepared with carbon oxide and nickel as catalytic element in nitrogen atmosphere at the temperature between 1323 to 1373 K. The nanowires were analysed for identifying their structure by using Bragg-Brentano X-ray diffraction on a Siemens D500 diffractometer with a Cu radiation. The morphology and crystal habit of the grown nanowires were further investigated by Scanning Electron Microscopy (SEM) while the Transmission Electron Microscopy (TEM) images and the SAD patterns as carried out by using a JEOL 2000FX operating at 200kV, proved useful for detailing the nanowires structure. In SEM images it is possible to see a dense network of high quality, long, interwoven fibres is obtained, several hundreds of microns long with uniform diameters under 40 nm. For both samples XRD patterns confirmed the characteristic peaks at 2q =35.6 (111), 41.4 (200), 59.9 (220), 75.5 (222) indexed as b-SiC. TEM analysis confirm cubic structures for both nanowires, stacking faults and twins are observed, mainly in the (111) basal plane. The core shell structure consists of a silicon carbide core enveloped by evident amorphous silicon oxide.
Subject SiC

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