Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Rossi F., Watts B. E., Salviati G., Battistig G., Dobos L., Pecz B. SiC epitaxial growth on Si(100) substrates using carbon tetrabromide. In: ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials (ICSCRM) (Nurnberg (Germany), 11-16 ottobre 2009).
3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging from 1100 to 1250C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.
vedi abstract inglese
URL: http://www.lap.physik.uni-erlangen.de/icscrm2009/index.php
Subject Silicon Carbide

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