Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Rossi F., Watts B. E., Pecz B., Battistig G. Growth and characterization of 3C-SiC grown using CBr4 as a precursor. In: WASMPE’09 (Catania, 07-08/05 2009).
The growth of silicon carbide on silicon is being studied for many diverse applications and so the search for precursors that could be used to grow with improved or novel physical, structural and morphological properties is a relevant issue in this field. Here we present a study of the use of CBr4 as a precursor in the deposition of 3C-SiC in a cold walled MOVPE reactor. The growth has been studied in a range of temperatures between 1100 and 1250 °C, on differently oriented substrates. Additionally, the effect of the C:Si ratio in the gas phase was examined by the addition of propane to the reaction mixture. At lower temperatures faceted crystals grew as islands on the substrate; faceting and 2D planar growth was obtained if higher growth temperatures were applied and at higher C:Si ratios. Atomic force and scanning microscopies revealed interesting growth habits of the island type crystals. Transmission electron microscopy in cross-section confirms that these islands are 3C-SiC and have a high crystal perfection. The crystal habit has been characterised and will be presented. Carbon tetrabromide has revealed itself to be a useful precursor for the growth of SiC and, with a judicious control of the growth conditions could be applied to the growth of thin films and nanocrystals.
Subject SiC

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