Istituto dei materiali per l'elettronica ed il magnetismo     
Trevisi G., Seravalli L., Frigeri P., Franchi S. Low density InAs/(In)GaAs quantum dots emitting at long wavelength. In: Euro MBE 2009 - 15th European Molecular Beam Epitaxy Workshop (Zakopane, Poland, 08-11 march 2009).
The development of single-photon sources emitting in the 1.3 - 1.6 Ám optoelectronic window is a topic of technological relevance [1]; to this purpose, the use of self-assembled semiconductor quantum dots (QD) is a very interesting approach as: i) QD emission can be engineered in the windows of interest, and ii) structures can be grown on GaAs substrates, with well known advantages over the InP solution. In order to match the requirements of single photon operation for telecom and datacom applications, both low QD density and long wavelength emission are necessary. On one side, low QD density may be achieved by suitably choosing the QD growth conditions and design parameters [2]; on the other one, long wavelength emissions towards 1.55 Ám have been successfully obtained by using QD strain engineering [3] or metamorphic buffers [4]; however a careful study of the mutual effects of these approaches is still lacking. We present here an approach that allows the separate control of QD density and QD emission wavelength based on the insertion of a pseudomorphic InGaAs upper confining layer (UCL) on top of low density InAs QDs grown on GaAs.
Subject low-density quantum dots
long wavelength emission
molecular beam epitaxy

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