Istituto dei materiali per l'elettronica ed il magnetismo     
Bosi M., Attolini G., Watts B. E., Frigeri C., Rossi F., Poggi A., Roncaglia A., Mancarella F., Martinez O., Hortelano V. Strain evaluation in SiC MEMS test structures. In: EURO CVD 17 / CVD 17 - 216th ECS Meeting, October 4 - October 9, 2009, Vienna, Austria (Vienna, 04-09/10 2009). Proceedings, vol. 28 pp. 1031 - 1037. M. Swihart, D. Barreca, R. Adomaitis, K. Worhoff (eds.). (Transactions of the Electrochemical Society, vol. 8). The Electrochemical Society, 2009.
This work presents the growth of β SiC on silicon by VPE performed in a home built, horizontal, cold wall reactor. Test structures used to assess the stresses in the film were obtained either by an etch through the wafer from the bottom side of the wafer to produce membranes or an attack from the front to reveal cantilevers. Membranes and cantilevers presented both compressive and tensile strain, depending on film thickness. Raman spectroscopy was used to study strain and defects.
DOI: 10.1149/1.3207702
Subject SiC

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