Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Watts B. E., Bosi M., Rossi F., Riesz F. A study of the morphology of 3C-SiC layers grown at different C/Si ratios. In: Euro CVD 17/ CVD 17 - 216th ECS Meeting (Vienna, 04-09/10 2009). Proceedings, vol. 25 pp. 397 - 401. B. Kolbesen, C. Claeys, L. Fabry, M. Bersani, D. Giubertoni, G. Pepponi (eds.). (Transactions of the Electrochemical Society, vol. 3). The Electrochemical Society, 2009.
A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined observations using Atomic Force Microscopy and Scanning Electron Microscopy indicate that the C:Si ratio is critical in determining the grain size and faceting at C:Si values close to 1. Makyoh topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.
DOI: 10.1149/1.3204430
Subject SiC

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