PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Calicchio M., Martinez O., Hortelano V. AFM and Raman scattering study of Ge/GaAs (100), (111)A and B heterostructures grown by MOVPE. In: EW-MOVPE XIII (ULM, Germania, 08-10/06 2009). Proceedings, article n. D4. EW-MOVPE XIII, 2009.
 
 
Abstract
(English)
In this communication we report on the growth of Ge heterolayers on (100), (111) A and B surfaces of GaAs substrates. Arsenic can play a role as both dopant and surfactant, changing the growth mechanism for the Ge/GaAs growth on (001) oriented substrates. The use of substrates oriented in different directions can change the growth mode and produce different results, since surface polarity can induce different growth modes: we have compared the results with respect to the non-polar surface case. The growth behavior on (001), (111)Ga and (111)As substrates is discussed. The layer morphology was investigated by Atomic Force Microscopy and Raman spectroscopy has been carried out as a function of the sample thickness
Subject Germanium
Raman


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