Istituto dei materiali per l'elettronica ed il magnetismo     
Dubecky F., Zatko B., Hubik P., Gombia E., Bohacek P., Huran J., Sekacova M. A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. In: Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, vol. 607 (1) pp. 132 - 134. Radiation Imaging Detectors 2008 - Proceedings of the 10th International Workshop on Radiation Imaging Detectors. ELSEVIER SCIENCE BV, 2009.
The present work describes current-voltage (I-V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts. Three different metals (In, Gd and Mg) having lower work function in comparison with the standard AuGeNi eutectic alloy, were used. These metals are expected to form a band bending at the M-S interface which should give rise to a blocking barrier for holes ("minority" carriers in SI GaAs). Such contacts, which could effectively replace standard alloyed N+ "ohmic" contact, show an unusual electrical charge transport as deduced from the measured I-V characteristics. Pulse-height spectra of Am-241 radionuclide source detected by the structures are also reported.
DOI: 10.1016/j.nima.2009.03.191
Subject GaAs
Metal-semiconductor contact
Schottky barrier
Work function

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