PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Abdullayeva S., Musayeva N., Jabbarov R., Pelosi C., Attolini G., Bosi M., Clerjaud B., Benalloul P., Barthou C. GaInPN/Si HETEROSTRUCTURE GROWTH BY METAL-ORGANIC VAPOUR PHASE EPITAXY. In: Fizika, vol. 15 pp. 18 - 23. Academician of the Russian Academy of Sciences, 2009.
 
 
Abstract
(English)
The growth of InGaPN epitaxial layers on silicon substrates by metal-organic vapour phase epitaxy using dimethylhydrazine, trimethylgallium, trimethylindium and phosphine precursors is reported. In order to reduce interface problems connected with hetero-bonds and antiphase domain formation, a very thin buffer layer of GaP has been grown on the hydrophobic silicon surface. The layers are prepared at temperature of 630C and have been characterized by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and Raman scattering. The growth occurs through 3 dimensional processes. Mean surface roughness as high as 20-30 nm is observed and phase separation is evidenced
Subject InGaPN
epitaxy
characterization


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