Istituto dei materiali per l'elettronica ed il magnetismo     
Rimada J., Prezioso M., Nasi L., Gombia E., Mosca R., Trevisi G., Seravalli L., Frigeri P., Bocchi C., Franchi S. Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs. In: Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 165 (1-2) pp. 111 - 114. Elsevier, 2009.
In this work we present the results of an electrical and structural characterization of MBE deposited InAs/ I n0.15 Ga0.85 As QD structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
URL: http://linkinghub.elsevier.com/retrieve/pii/S0921510708004327
DOI: 10.1016/j.mseb.2008.10.007
Subject Quantum dots
Transmission electron microscopy
MBE growth
Electrical measurements
Deep Levels

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