PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Ercolani D., Rossi F., Li A., Roddaro S., Grillo V., Salviati G., Beltram F., Sorba L. InAs/InSb nanowire heterostructures grown by chemical beam epitaxy. In: Nanotechnology, vol. 20 (50) article n. 505605. IOP Publishing, 2009.
 
 
Abstract
(English)
We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
Abstract
(Italiano)
vedi abstract inglese
URL: http://stacks.iop.org/Nano/20/505605
DOI: 10.1088/0957-4484/20/50/505605
Subject Nanowires
TEM


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