Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Watts B. E., Bosi M., Rossi F., Riesz F. A comparative study of the morphology of 3C-SiC grown at different C/Si ratios. In: Materials Science Forum, vol. 615-617 pp. 153 - 156. Trans Tech Publications, 2009.
A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.
vedi abstract inglese
URL: http://www.scientific.net/MSF.615-617.153
DOI: 10.4028/www.scientific.net/MSF.615-617.153
Subject Silicon Carbide
Makyoh topography
Vapour Phase Epitaxy
Surface morphology
C:Si Ratio

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