Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Rossi F., Fabbri F., Bosi M., Watts B. E., Salviati G. A new growth method for the synthesis of 3C-SiC nanowires. In: Materials Letters, vol. 63 pp. 2581 - 2583. Elsevier, 2009.
A new method has been developed to grow nickel-catalysed SiC nanowires on silicon, by a chemical reaction involving carbon tetrachloride as a single precursor. This produces long crystalline 3C-SiC nanowires with <111> axis, as verified by transmission electron microscopy. A broad optical emission centred at about 2 eV is detected by cathodoluminescence spectroscopy. The Gaussian component at about 2.2 eV corresponds to the indirect 3C-SiC band gap emission, while the dominant red emission is related to oxygen incorporation.
vedi abstract inglese
URL: http://www.elsevier.com/locate/matlet
DOI: 10.1016/j.matlet.2009.09.012
Subject Silicon carbide

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